Semiconductor device with solder balls having high reliability

ABSTRACT

A semiconductor device includes a substrate, a metal layer, an alloy layer and a Sn—Ag—Cu-based solder ball. The metal layer is configured to be formed on the substrate. The alloy layer is configured to be formed on the metal layer. The Sn—Ag—Cu-based solder ball is configured to be placed on the alloy layer. The alloy layer includes Ni and Zn as essential elements.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device. Moreparticularly, the present invention relates to a semiconductor devicewith solder balls as external connection terminals having highreliability.

2. Description of the Related Art

Conventionally, Sn—Pb eutectic solder has been used. However, since alead-free solder is requested, various solders are developed.

For example, Japanese Laid-Open Patent Application JP-A-Heisei, 5-50286discloses one of such solders. The solder (hereafter, referred to asSn—Ag—Cu-based Solder) is composed of: Ag between 3.0 and 5.0 weight %;Cu between 0.5 and 3.0 weight %; and Sn of the remainder. The solderball of such composition is actually used as the external connectionterminal of BGA (Ball Grid Array).

FIG. 1 is a sectional view showing a conventional semiconductor device.As shown in FIG. 1, in the conventional semiconductor device, a solderresist 103 having an opening is formed on a substrate 101, A Cu layer105, a Ni layer 107 and an alloy layer 109 are laminated in turn insidethis opening. The alloy layer 109 includes Cu, Ni and Sn as essentialcomponents A Sn—Ag—Cu-based solder 111 is installed on the surface ofthe alloy layer 109.

FIG. 2 is a sectional view showing an example where the conventionalsemiconductor device is installed on a mount substrate. As shown in FIG.2, the mount substrate has a solder resist 123 having an opening on asubstrate 121, A Cu layer 125 is formed inside this opening. When theSn—Ag—Cu-based solder 111 is mounted, an alloy layer 129 that includesCu and Sn is formed between the Cu layer 125 and the Sn—Ag—Cu-basedsolder 111. The Cu layer 125 and the Sn—Ag—Cu-based solder 111 arebonded through this alloy layer 129.

On the other hand, Japanese Laid-Open Patent ApplicationJP-P2001-156207A discloses a semiconductor device in which Sn—Zn-basedsolder balls are used as external connection terminals.

However, we have now discovered that the conventional technique has aroom to be improved with regard to the following points.

Firstly, when the Sn—Ag—Cu-based solder described in the JP-A-Heisei,5-50286 was used as the external connection terminals of the BGA, theimpact resistance of the alloy layer 109, which included Cu, Ni and Snand served as the solder bonding portion on the semiconductor deviceside, was lower than that of the conventional Sn—Pb eutectic solder.Thus, there was a case that the connection reliability was reduced.

Secondly, when the Sn—Zn-based solder described in the JP-P2001-156207Awas used as the external connection terminals, the impact resistance ofthe alloy layer serving as the solder bonding portion on thesemiconductor device side was improved. However, since the Sn—Zn-basedsolder was low in humidity resistance, there was a case that theconnection reliability for a long term could not be maintained.Moreover, since the Zn included in the Sn—Zn-based solder was very highin reactivity with Cu, an alloy layer (Zn—Cu alloy layer) having a thickthickness is formed on the bonding surface. For this reason, the impactresistance of the alloy layer serving as the solder bonding portion onthe mount substrate side was low, and there was a case that it wasstripped when external force was applied. In this way, the mountsubstrate requires the limit even on the metal material of the portionbonded to the solder.

For this reason, a semiconductor device having solder balls as externalconnection terminals, which is superior in connection reliability to amount substrate and superior even in a connection reliability for a longterm, is desired.

SUMMARY OF THE INVENTION

In order to achieve an aspect of the present invention, the presentinvention provides a semiconductor device including: a substrate; ametal layer configured to be formed on the substrate; a alloy layerconfigured to be formed on the metal layer; and a Sn—Ag—Cu-based solderball configured to be placed on the alloy layer, wherein the alloy layerincludes Ni and Zn as essential elements.

In order to achieve another aspect of the present invention, the presentinvention provides a method of manufacturing a semiconductor deviceincluding: (a) forming a solder resist having an opening on a substrate;(b) forming a Ni inclusion plating layer inside the opening; and (c)installing a Sn—Ag—Cu-based solder ball through an alloy layer, whichincludes Ni and Zn as essential elements, on the Ni inclusion platinglayer.

According to the present invention, since the alloy layer includes Niand Zn, the impact resistance is high, and the reliability of theconnection between the metal layer and solder ball is superior.Moreover, since the Sn—Ag—Cu-based solder ball is used as the solderball, the connection is strong against heat and humidity, and thereliability of the connection for a long term can be maintained.Furthermore, the flexibility of the selection of the metal material inthe mount substrate is improved.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, advantages and features of the presentinvention will be more apparent from the following description taken inconjunction with the accompanying drawings, in which:

FIG. 1 is a sectional view showing a conventional semiconductor device;

FIG. 2 is a sectional view showing an example where the conventionalsemiconductor device is installed on a mount substrate;

FIG. 3 is a sectional view showing the semiconductor device of the firstembodiment according to the present invention;

FIG. 4 is a sectional view showing an example that the semiconductordevice of the first embodiment is installed on a mount substrate;

FIGS. 5 to 8 are sectional views showing a method of manufacturing thesemiconductor device of the first embodiment;

FIGS. 9 to 13 are sectional views showing the method of manufacturingthe semiconductor device of the second embodiment; and

FIGS. 14 to 16 are sectional views showing the method of manufacturingthe semiconductor device of the third embodiment.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The invention will be now described herein with reference toillustrative embodiments. Those skilled in the art will recognize thatmany alternative embodiments can be accomplished using the teachings ofthe present invention and that the invention is not limited to theembodiments illustrated for explanatory purposed.

Embodiments of a semiconductor device according to the present inventionwill be described below with reference to the attached drawings.Incidentally, in all of the drawings, the similar symbols are assignedto the similar components, and their explanations are properly omitted.

FIG. 3 is a sectional view showing the semiconductor device of anembodiment according to the present invention. The semiconductor devicein this embodiment includes; a substrate 1; metal layers formed on thesubstrate 1; alloy layers formed on the metal layers; and aSn—Ag—Cu-based solder ball 17 installed on the surface of the metallayer. The metal layers are composed of a Cu layer 5 and a Ni layer 8(20). The alloy layer is composed of a Ni—Zn alloy layer 9 and/or aNi—Au—Zn alloy layer 22 formed on the metal layers.

The alloy layer includes Ni and Zn as essential components and iscomposed of an alloy of Ni and Zn, an alloy of Ni, Au and Zn, or analloy of Ni, Pd and Zn, or the like. This embodiment uses the alloylayer (hereafter, also referred to as Ni—Zn inclusion alloy layer) thatincludes Ni and Zn as the essential components. Thus, the impactresistance is high, and the connection reliability between the metallayer and the solder ball is excellent. Incidentally, in thisembodiment, the layer formed between the metal layer and theSn—Ag—Cu-based solder ball 17 is described as the alloy layer However,this alloy layer may be the layer composed of intermetallic compound.

Also, the thickness of the Ni—Zn inclusion alloy layer is between about0.02 μm and 0.3 μm. The thickness of the alloy layer is verified by theobservation that uses an electron microscope. In this embodiment, sincethe alloy layer is composed of the Ni—Zn inclusion alloy, it can be thethin layer within the foregoing value range. Thus, the bonding propertyto the Sn—Ag—Cu-based solder ball is excellent, the impact resistance ishigh, and the connection reliability to the metal layer is alsoexcellent.

The detail of this embodiment will be described below by using the firstto third embodiments. Incidentally, this embodiment is described byusing an example that an IC package on which a semiconductor chip ismounted is used as a semiconductor device and that this IC package ismounted on a printed circuit board,

First Embodiment

As shown in FIG. 3, in the semiconductor device of the first embodiment,a solder resist 3 having an opening is formed on the substrate 1. A Culayer 5, a Ni layer 8 and an alloy layer are laminated in turn insidethis opening.

In this embodiment, the alloy layer is the Ni—Zn alloy layer 9 composedof Ni and Zn. The Sn—Ag—Cu-based solder ball 17 is installed on thesurface of the Ni—Zn alloy layer 9.

FIG. 4 is a sectional view showing an example that the semiconductordevice of the first embodiment is installed on a mount substrate.

As shown in FIG. 4, a solder resist 33 having an opening is formed on asubstrate 31, in the mount substrate. A Cu layer 35 and an alloy layer(hereafter, referred to as a Cu—Sn alloy layer 37) composed of Cu and Znare laminated inside this opening. The Sn—Ag—Cu-based solder ball 17 isadhered through the Cu—Sn alloy layer 37 to the Cu layer 35, In thisway, the Cu—Sn alloy layer 37 is formed between the mount substrate andthe Sn—Ag—Cu-based solder ball 17. Thus, the connection reliabilitybetween the semiconductor device and the mount substrate is excellent.

A method of manufacturing the semiconductor device of the firstembodiment as mentioned above will be described below with referencedrawings. FIGS. 5 to 8 are sectional views showing the method ofmanufacturing the semiconductor device of the first embodiment.

The method of manufacturing the semiconductor device of the firstembodiment includes the following steps of:

(1) forming the solder resist 3 having the opening on the substrate 1(FIG. 5).

(2) forming a Ni inclusion plating layer (the Cu layer 5 and the Nilayer 7) inside the opening (FIG. 5);

(3) installing the Sn—Ag—Cu-based solder ball 17 through the alloy layer(the Ni—Zn alloy layer 9), which includes Ni and Zn as the essentialcomponents, on the Ni inclusion plating layer (FIGS. 7 to 8).

The details of the method of manufacturing the semiconductor device arefollows.

At first, the solder resist 3 having the opening at a predeterminedposition is formed on the substrate 1 by using usual exposing/developingtechniques. Then, the Cu layer 5 and the Ni layer 7 are plated in turnon the surface of the substrate 1 that is exposed to the bottom of thisopening, and the Ni inclusion plating layer is formed (FIG. 5).

Next, a Zn inclusion solder layer is formed on the surface of the Nilayer 7, and a heating process is performed thereon. Specifically, ausual solder plating is used for carrying out a Sn—Zn solder plating.Consequently, the alloy layer composed of Ni and Zn (the Ni—Zn alloylayer 9) is composed of Ni of the Ni layer 7 and Zn of the Sn—Zn solderplating (FIG. 6). The solder plating is carried out in a soldering bathat about 350° C. (degrees centigrade). Consequently, the pad where theCu layer 5, the Ni layer 8, the Ni—Zn alloy layer 9 and a Sn layer 11are laminated in turn inside the opening (FIG. 6). The formation of theNi—Zn alloy layer 9 is verified by an energy-dispersive X-rayspectroscopy (EDS).

Next, an oxide film on the pad surface is removed by flux (surfactant).Then, a Sn—Ag—Cu-based solder ball 15 is installed on the pad surface(FIG. 7). Next, the solder is melted by holding it at a temperatureequal to or higher than a melting point (about 250° C. (degreescentigrade)) for about 30 seconds. The Sn layer 11 on the pad and the Snin the solder ball 15 are fused (FIG. 8). Consequently, theSn—Ag—Cu-based solder ball 17 and the metal layers (the Ni layer 8 andthe Cu layer 5) are connected through the Ni—Zn alloy layer 9.

The layer configuration is the lamination structure of the Cu layer 5,the Ni layer 8 and the Ni—Zn alloy layer 9 from a Cu electrode side.Then, the Sn—Ag—Cu-based solder ball 17 is installed on the surface ofthe Ni—Zn alloy layer 9.

The effect of the first embodiment will be described below.

According to the semiconductor device in the first embodiment, since thealloy layer is composed of Ni and Zn, the impact resistance is high, andthe connection reliability between the metal layer and the solder ballis excellent, Moreover, since the Sn—Ag—Cu-based solder ball is used asthe solder ball, this is strong against heat and humidity, and theconnection reliability for a long term can be maintained. Moreover, theflexibility of the selection of the metal material in the mountsubstrate is improved.

Also, the layer thickness of the alloy layer that includes Ni and Zn asthe essential components is between 0.02 μm and 0.3 μm. Thus, the impactresistance is high, and the connection reliability is excellent.

On the other hand, in a conventional semiconductor device (FIGS. 1 and2), an alloy layer 109 including Cu, Ni and Sn is formed, and this layerthickness is between about 1 μm and 2 μm. Thus, the alloy layer 9 is lowin the impact resistance, and there was a case that the connectionreliability was reduced.

On the contrary, the alloy layer in this embodiment includes Ni and Znas the essential components. For this reason, the alloy layer can be thethin layer within the foregoing value range. Thus, the bonding propertyto the Sn—Ag—Cu-based solder ball is excellent, and the impactresistance is high. Hence, the connection reliability of thesemiconductor device is also excellent.

Second Embodiment

A semiconductor device in the second embodiment differs from thesemiconductor device in the first embodiment in that an alloy layer isan alloy layer (Ni—Au—Zn alloy layer 22) composed of Ni, Au and Zn.

A method of manufacturing the semiconductor device of the secondembodiment as mentioned above will be described below with reference todrawings. FIGS. 9 to 13 are sectional views showing the method ofmanufacturing the semiconductor device of the second embodiment.

The method of manufacturing the semiconductor device of the secondembodiment includes the following steps of:

(1) forming the solder resist 3 having the opening on the substrate 1(FIG. 9);

(2) forming a Ni inclusion plating layer (the Cu layer 105, a Ni layer18 and an Au layer 19) inside the opening (FIG. 9), and

(3) installing the Sn—Ag—Cu-based solder ball 17 through the alloy layer(the Ni—Au—Zn alloy layer 22), which includes Ni and Zn as the essentialcomponents, on the Ni inclusion plating layer (FIGS. 10 to 13).

The details of the method of manufacturing the semiconductor device arefollows.

At first, the solder resist 3 having the opening at the predeterminedposition is formed on the substrate 1 by using the usualexposing/developing techniques. Then, the Cu layer 5, the Ni layer 18and the Au layer 19 are plated in turn on the surface of the substrate 1that is exposed to the bottom of this opening, and the plating layerthat includes Ni and Au is formed (FIG. 9).

Next, the Zn inclusion solder layer is formed on the surface of the Aulayer 19, and a heating process is performed thereon. Specifically, aSn—Zn solder paste 21 is printed on the surface of the Au layer 19 (FIG.10). Then, it is heated at about 250° C. (degrees centigrade) for 30seconds, and the solder is melted. Consequently, the Ni—Au—Zn alloylayer 22 is formed as the alloy layer (FIG. 11). Consequently, the padwhere the Cu layer 5, the Ni layer 20, the Ni—Au—Zn alloy layer 22 andthe Sn layer 11 are laminated in turn inside the opening (FIG. 11). Theformation of the Ni—Au—Zn alloy layer 22 is verified by theenergy-dispersive X-ray spectroscopy (EDS).

Next, the oxide film on the pad surface is removed by the flux(surfactant), and the Sn—Ag—Cu-based solder ball 15 is installed on thepad surface (FIG. 12). Next, the solder is melted by holding it at thetemperature equal to or higher than the melting point (about 250° C.(degrees centigrade)) for about 30 seconds, and the Sn layer 11 on thepad and the Sn in the solder ball 15 are fused (FIG. 13).

The layer configuration is the lamination structure of the Cu layer 5,the Ni layer 20 and the Ni—Au—Zn alloy layer 22 from the Cu electrodeside. The Sn—Ag—Cu-based solder ball 17 is installed on the surface ofthis Ni—Au—Zn alloy layer 22.

The effect of the second embodiment as mentioned above will be describedbelow.

The semiconductor device in the second embodiment can obtain the effectof the first embodiment. Moreover, since the Ni—Zn inclusion alloyconstituting the alloy layer is the Ni—Au—Zn alloy, the impactresistance is further excellent, and the connection reliability betweenthe metal layer and the solder ball is further excellent.

Third Embodiment

A semiconductor device in the third embodiment differs from thesemiconductor device in the first embodiment in that the alloy layer isthe Ni—Au—Zn alloy layer 22.

A method of manufacturing the semiconductor device of the thirdembodiment as mentioned above will be described below with reference todrawings. FIGS. 14 to 16 are sectional views showing the method ofmanufacturing the semiconductor device of the third embodiment.

The method of manufacturing the semiconductor device of the thirdembodiment includes the following steps of:

(1) forming the solder resist 3 having the opening on the substrate 1(FIG. 14);

(2) forming the Ni inclusion plating layer (the Cu layer 5, the Ni layer18 and the Au layer 19) inside the opening (FIG. 14); and

(3) installing a Sn—Ag—Cu-based solder ball 25 through the alloy layer(the Ni—Au—Zn alloy layer 22), which includes Ni and Zn as the essentialcomponents, on the Ni inclusion plating layer (FIGS. 15 and 16).

The details of the method of manufacturing the semiconductor device arefollows.

At first, the solder resist 3 having the opening at the predeterminedposition is formed on the substrate 1 by using the usualexposing/developing techniques. Then, the Cu layer 5, the Ni layer 18and the Au layer 19 are plated in turn on the surface of the substrate 1that is exposed to the bottom of this opening, and the plating layerthat includes Ni and Au is formed (FIG. 14).

Next, the oxide film on the surface of the Au layer 19 is removed by theflux (surfactant), and a Sn—Ag—Cu-based solder ball 23 is placed on thesurface of the Au layer 19 (FIG. 15). This Sn—Ag—Cu-based solder ball 23includes Zn at an amount of about 1 weight %. Next, while it is held atthe temperature equal to or higher than the melting point (about 250° C.(degrees centigrade)) for 30 seconds, a heating process is performedthereon. Consequently, the solder is melted, Then, the Ni—Au—Zn alloylayer 22 is constituted by the partial Ni of the Ni layer 18, the Aulayer 19 and the Zn included in the Sn—Ag—Cu-based solder ball 23 (FIG.16). The formation of the Ni—Au—Zn alloy layer 22 is verified by theenergy-dispersive X-ray spectroscopy (EDS).

The layer configuration is the lamination structure of the Cu layer 5,the Ni layer 20 and the Ni—Au—Zn alloy layer 22, from the Cu electrodeside. Moreover, the Sn—Ag—Cu-based solder ball 25 is installed on thesurface of the Ni—Au—Zn alloy layer 22.

The effect of the third embodiment as mentioned above will be describedbelow.

The semiconductor device in the third embodiment can obtain the effectof the first embodiment. Similarly to the second embodiment, the alloylayer is composed of the Ni—Au—Zn compound. Thus, the effect of thesecond embodiment is also obtained. Moreover, the Sn—Ag—Cu-based solderball 23 that includes Zn at the amount of about 1 weight % is used asthe supply source of Zn. Hence, the step to form the alloy layer can besimplified.

As mentioned above, the embodiments of the present invention have beendescribed by referring to the drawings However, they are theexemplification of the present invention. The various configurationsother than the above-mentioned configurations can be employed.

The above-mentioned embodiments are described by using the example wherethe IC package on which the semiconductor chip is mounted is used as thesemiconductor device, and this IC package is mounted on the printedcircuit board. However, the semiconductor chip is used as thesemiconductor device, and this semiconductor chip can be mounted on apackage substrates

Also, the third embodiment is explained by using the example where theNi—Au—Zn alloy layer is formed as the alloy layer. However, byinstalling the Sn—Ag—Cu-based solder ball 23, which includes Zn, on thesurface of the Ni layer 18, it is possible to form the alloy layer madeof Ni and Zn on the interface between them. According to this method,the step to form the alloy layer can be further simplified.

[Experiment]

[Experiment 1]

In accordance with the first embodiment, the semiconductor device wasmanufactured under the following conditions

(a) Sn—Zn solder plating condition: 350° C. (degrees centigrade)Soldering Bath

(b) Solder melting condition of Sn—Ag—Cu-based solder ball 15; Held at250° C. (degrees centigrade) For 30 Seconds

In the thus-obtained semiconductor device, the energy-dispersive X-rayspectroscopy (EDS) was used to verify the formation of the Ni—Zn alloylayer 9, Moreover, when the layer thickness of the Ni—Zn alloy layer 9was verified with the electron microscope, it was about 0.3 μm.

[Experiment 2]

In accordance with the second embodiment, the semiconductor device wasmanufactured under the following conditions.

(a) Solder melting condition of Sn—Zn Solder Paste 21: Held at 250° C.(degrees centigrade) For 30 Seconds

(b) Solder melting condition of Sn—Ag—Cu-based solder ball 15: Held at250° C. (degrees centigrade) For 30 Seconds

In the thus-obtained semiconductor device, the energy-dispersive X-rayspectroscopy (EDS) was used to verify the formation of the Ni—Au—Znalloy layer 22. Moreover, when the layer thickness of the Ni—Au—Zn alloylayer 22 was verified with the electron microscope, it was about 0.15μm.

[Experiment 3]

In accordance with the third embodiment, the semiconductor device wasmanufactured under the following conditions

(a) Solder melting condition of Sn—Ag—Cu-based solder ball 23 includingZn at 1 weight %: Held at 250° C. (degrees centigrade) For 30 Seconds

In the thus-obtained semiconductor device, the energy-dispersive X-rayspectroscopy (EDS) was used to verify the formation of the Ni—Au—Znalloy layer 22. Moreover, when the layer thickness of the Ni—Au—Zn alloylayer 22 was verified with the electron microscope, it was about 0.1 μm.

COMPARISON EXAMPLE 1

In accordance with the conventional method, the semiconductor device wasmanufactured as shown in FIG. 1. In the semiconductor device, theenergy-dispersive X-ray spectroscopy (EDS) was used to verify theformation of the alloy layer 109 made of Cu, Ni and Sn. Moreover, whenthe layer thickness of the alloy layer 109 made of Cu, Ni and Sn wasverified with the electron microscope, it was about 1.5 μm

The semiconductor devices in the experiments 1 to 3 and comparisonexample 1 obtained as mentioned above were mounted on the mountsubstrate. Then, same impact was applied from outside to each of thesesemiconductor devices, and the impact resistances were verified. As aresult, in all of the experiments 1 to 3, it was verified that there wasno strip between the Ni—Zn alloy layer 9 or the Ni—Au—Zn-based alloylayer 22 and the Sn—Ag—Cu-based solder ball 17 (25) and that theadhesive property was high. On the other hand, in the semiconductordevice of the comparison example 1, it was verified that the there wasthe strip between the alloy layer 109 and the Sn—Ag—Cu-based solder ball111 and that the adhesive property was low.

In this way, it was verified that the employment of the structure wherethe Sn—Ag—Cu-based solder ball was installed on the surface of the alloylayer, which included Ni and Zn as the essential components, could makethe impact resistance better and improve the connection reliability ofthe semiconductor device.

According to the present invention, the semiconductor device can beprovided, which is superior in the connection reliability to the mountsubstrate and superior even in the connection reliability for the longterm, where the flexibility for selecting the metal material in themount substrate is improved.

It is apparent that the present invention is not limited to the aboveembodiment that may be modified and changed without departing from thescope and spirit of the invention.

1. A semiconductor device comprising: a substrate; a metal layerconfigured to be formed on said substrates an alloy layer configured tobe formed on said metal layer; and a Sn—Ag—Cu-based solder ballconfigured to be placed on said alloy layer, wherein said alloy layerincludes Ni and Zn as essential elements.
 2. The semiconductor deviceaccording to claim 1, wherein said alloy layer essentially consists ofNi and Zn.
 3. The semiconductor device according to claim 1, whereinsaid alloy layer essentially consists of Ni, Au and Zn.
 4. Thesemiconductor device according to claim 1, wherein a thickness of saidmetal layer is in a range of 0.02 μm to 0.3 μm.
 5. The semiconductordevice according to claim 1, wherein said metal layer includes: a firstmetal layer configured to be composed of Ni, wherein said alloy layer isformed on said first layer.
 6. The semiconductor device according toclaim 5, wherein said alloy layer essentially consists of Ni and Zn. 7.The semiconductor device according to claim 5, wherein said alloy layeressentially consists of Ni, Au and Zn.
 8. A method of manufacturing asemiconductor device comprising: (a) forming a solder resist having anopening on a substrate; (b) forming a Ni inclusion plating layer insidesaid opening; and (c) installing a Sn—Ag—Cu-based solder ball through analloy layer, which includes Ni and Zn as essential elements, on said Niinclusion plating layer.
 9. The method of manufacturing a semiconductordevice according to claim 8, wherein said step (c) includes: (c1)forming a Zn inclusion solder layer on said Ni inclusion plating layer,and (c2) forming said alloy layer composed of Ni and Zn between said Zninclusion solder layer and said Ni inclusion plating layer by a heattreatment.
 10. The method of manufacturing a semiconductor deviceaccording to claim 8, wherein said Ni inclusion plating layer iscomposed of Ni and Au, wherein said step (c) includes; (c1) forming a Zninclusion solder layer on said Ni inclusion plating layer, and (c2)forming said alloy layer composed of Ni, Au and Zn between said Zninclusion solder layer and said Ni inclusion plating layer by a heattreatment.
 11. The method of manufacturing a semiconductor deviceaccording to claim 8, wherein said Sn—Ag—Cu-based solder ball includesZn, wherein said step (c) includes: (c1) placing said Sn—Ag—Cu-basedsolder ball on said Ni inclusion plating layer, and (c2) forming saidalloy layer composed of Ni and Zn between said Sn—Ag—Cu-based solderball and said Ni inclusion plating layer by a heat treatment.
 12. Themethod of manufacturing a semiconductor device according to claim 8,wherein said Sn—Ag—Cu-based solder ball includes Zn, wherein said Niinclusion plating layer is composed of Ni and Au, wherein said step (c)includes: (c1) placing said Sn—Ag—Cu-based solder ball on said Niinclusion plating layer, and (c2) forming said alloy layer composed ofNi, Au and Zn between said Sn—Ag—Cu-based solder ball and said Niinclusion plating layer by a heat treatment.
 13. The method ofmanufacturing a semiconductor device according to claim 8, furthercomprising: (d) forming a Cu layer inside said opening on said substratebefore forming said Ni inclusion plating layer.